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For the Inventor, By the Inventor

Hsinchu, Taiwan

De-Fang Chen

This inventor holds 58 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: De-Fang Chen. Retrieved from https://idiyas.com/inventor/de-fang-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 58 

% Patents Active = 74.1

Average Co-Inventor Count = 5.8

ph-index = 5

Forward Citations = 136(Granted Patents)

Forward Citations (Not Self Cited) = 102(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Lujhu Township, Taoyuan County, TW (2010)
  • Taichung, TW (2017)
  • Lujhu Township, TW (2014 - 2024)
  • Hsinchu, TW (2015 - 2024)

Company Filing History:

goldMedal58 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2010-2026

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Areas of Expertise:
Semiconductor Devices
Vertical Structures
Critical Dimension Uniformity
Nanowire Formation
Epitaxial Features
Integrated Circuit
Tunnel Field-Effect Transistor
Photolithography
Source/Drain Features
Isolation Layer
Gate Structure
Double Patterning
58 patents (USPTO):Explore Patents
1. 12532532 - Epitaxial features in semiconductor devices and method of manufacturing (2026-01-20),
2. 12520526 - Semiconductor devices with modified source/drain feature and methods thereof (2026-01-06),
3. 12349435 - Vertical device having a protrusion source (2025-07-01),
4. 12283596 - Semiconductor device and manufacturing method thereof (2025-04-21),
5. 12080800 - Semiconductor devices with modified source/drain feature and methods thereof (2024-09-03),
6. 12027370 - Method of forming an integrated circuit using a patterned mask layer (2024-07-02),
7. 11916131 - Vertical device having a protrusion source (2024-02-27),
8. 11901188 - Method for improved critical dimension uniformity in a semiconductor device fabrication process (2024-02-13),
9. 11855167 - Structure and formation method of semiconductor device with nanosheet structure (2023-12-26),
10. 11742353 - Semiconductor device and manufacturing method thereof (2023-08-29),
11. 11462408 - Method of forming an integrated circuit using a patterned mask layer (2022-10-04),
12. 11289338 - Method for improved critical dimension uniformity in a semiconductor device fabrication process (2022-03-29),
13. 11227788 - Method of forming isolation layer (2022-01-18),
14. 11056486 - Semiconductor device with multiple threshold voltage and method of fabricating the same (2021-07-06),
15. 10879129 - Self-aligned nanowire formation using double patterning (2020-12-29),

Title: The Innovative Journey of Inventor De-Fang Chen

Introduction: De-Fang Chen, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: De-Fang Chen's latest patents include cutting-edge technologies in the fields of semiconductor devices, nanotechnology, and renewable energy solutions, showcasing his commitment to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, De-Fang Chen has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors. His innovative spirit and dedication to research have earned him recognition on a global scale.

Collaborations: Throughout his career, De-Fang Chen has collaborated with top research institutions, leading companies, and brilliant minds in the field of technology. These collaborations have not only enriched his work but have also paved the way for groundbreaking inventions that have shaped the industry.

Conclusion: De-Fang Chen's relentless pursuit of innovation and his passion for creating technologies that make a difference have solidified his position as a visionary inventor. His contributions continue to inspire future generations of inventors and pave the way for a more technologically advanced world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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