The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 08, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Cheng Wang, Kaohsiung, TW;

Ting-Yeh Chen, Hsinchu, TW;

De-Fang Chen, Hsinchu, TW;

Wei-Yang Lee, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor fin and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and multiple inner spacers. Each of the inner spacers is between the gate stack and the source/drain epitaxial structure. The semiconductor device structure further includes an isolation structure between the semiconductor fin and the source/drain epitaxial structure.


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