The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jun. 07, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Te-Chih Hsiung, Taipei, TW;
Jyun-De Wu, New Taipei, TW;
Peng Wang, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6211 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract
A device includes a source region and a drain region over a substrate. The device further includes a gate structure at least partially between the source region and the drain region, and a gate contact over the gate structure. The gate contact has an upper portion and a lower portion below the upper portion. The lower portion is more tapered than the upper portion.
Quick Actions:
Hsiung, Te-Chih. (2026). Transistor device with tapered gate contact profile (U.S. Patent No. 12550362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550362
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