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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9779947 B1

PDFFull Text
Date of Patent:
Oct. 03, 2017

Filed:

Jan. 06, 2016

Self-aligned insulated film for high-k metal gate device

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jin-Aun Ng, Hsinchu, TW;

Jen-Sheng Yang, Keelung, TW;

Pei-Ren Jeng, Chu-Bei, TW;

Jung-Hui Kao, Hsin-Chu, TW;

Shih-Hao Lo, Zhubei, TW;

Yuan-Tien Tu, Puzih, TW;

Bao-Ru Young, Zhubei, TW;

Harry-Hak-Lay Chuang, Singapore, SG;

Maxi Chang, Banciao, TW;

Chih-Tang Peng, Zhubei, TW;

Chih-Yang Yeh, Jhubei, TW;

Ta-Wei Lin, Minxiong Township, TW;

Huan-Just Lin, Hsinchu, TW;

Hui-Wen Lin, Taiping, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28229 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 29/42364 (2013.01); H01L 29/4958 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01);
Abstract

An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.

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