The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Feb. 11, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yi-Juei Lee, Hsinchu, TW;
Chia-Ming Liang, Taipei, TW;
Chi-Hsin Chang, New Taipei, TW;
Jin-Aun Ng, Hsinchu, TW;
Yi-Shien Mor, Hsinchu, TW;
Huai-Hsien Chiu, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823456 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/823412 (2013.01);
Abstract
A method includes forming a first fin on a semiconductor substrate, forming an isolation dielectric material over the first fin, and planarizing the isolation dielectric material. A top surface of the first fin is covered by the isolation dielectric material after planarizing the isolation dielectric material. The method further includes etching back the isolation dielectric material until the first fin protrudes from the isolation dielectric material.