The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
May. 23, 2024
Macronix International Co., Ltd., Hsinchu, TW;
PO-Hao Tseng, Taichung, TW;
Feng-Min Lee, Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a first memory cell including channel, source and drain structures and a charge trap layer. When a first data bit has a first logic value and a voltage signal applied to the charge trap layer has a first voltage level, a current signal flowing through the channel structure has a first current level. When the first data bit has the first logic value and the voltage signal has a second voltage level, the current signal has a second current level. When the first data bit has a second logic value and the voltage signal has the first voltage level, the current signal has the second current level. When the first data bit has the second logic value and the voltage signal has the second voltage level, the current signal has the first current level.