Macronix International Co., Ltd.

Feng-Min Lee

Yu-Yu Lin

Po-Hao Tseng

Ming-Hsiu Lee

Yu-Hsuan Lin

Kai-Chieh Hsu

Erh-Kun Lai

Dai-Ying Lee

Tian-Cih Bo

Wei-Chih Chien

Yun-Yuan Wang

Wei-Lun Weng

Wei-Fu Wang

Wei-Chen Chen

Yung-Chun Li

Kuang-Hao Chiang

Cheng-Hsien Lu

Chao-Hung Wang

Chien-Hung Lu

Liang-Yu Chen

Chin-Yi Tseng

Chih-Chieh Yu

A memory structure includes insulating layers, gate layers, a first doping layer, second doping layers, third doping layers, a columnar channel, a first dielectric layer, second dielectric layers, and a third dielectric layer. The first doping layer and the columnar channel penetrate through the insulating layers and the gate layers that are alternately stacked. The second doping layers are in direct contact with the first doping layer to form tunnel diodes, in which the second doping layers and the insulating layers are alternately stacked. The third doping layers surround the columnar channel and are connected to the second doping layers. The first dielectric layer is between the first doping layer and the gate layers. The second dielectric layers are between the third doping layers and the gate layers. The third dielectric layer is between the columnar channel and the third doping layers.

Memory structure, manufacturing method thereof, operating method thereof, and memory array

A reservoir device, comprises a first transistor and a second transistor. A gate of the first transistor is coupled to a write word line, a drain of the first transistor is coupled to a write bit line. A source of the second transistor is coupled to a read source line, a drain of the second transistor is coupled to a read bit line, and a gate of the second transistor is coupled to a source of the first transistor. A storage node is located on a coupling point between the gate of the second transistor and the source of the first transistor. The reservoir device selectively performs a write operation, a read operation or a refresh operation in response to an input voltage received by the write word line, the write bit line, the read source line and the read bit line respectively.

Reservoir device and reservoir array

A memory device for performing an in-memory computation, comprising a plurality of memory cells each stores a weight value and comprises a transistor and a resistor. A gate of the transistor receives an input voltage, the input voltage indicates an input value. When the transistor operates at a first operating point, the input voltage is equal to a first input voltage, when the transistor operates at a second operating point, the input voltage is equal to a second input voltage. The resistor is connected to a drain and a source of the transistor, when the resistor operates in a first state, the weight value is equal to a first weight value, when the resistor operates in a second state, the weight value is equal to a second weight value. Each of the memory cells performs a product computation of the input value and the weight value.

Memory device for performing in-memory computation and operating method thereof

A memory structure includes insulating layers, gate layers, a first doping layer, channel layers, a columnar channel, second doping layers, a first dielectric layer, second dielectric layers, a third dielectric layer, and fourth dielectric layers. The first doping layer and the columnar channel penetrate through the insulating layers and the gate layers that are alternately stacked. The channel layers are connected to the first doping layer, in which the channel layers and the insulating layers are alternately stacked. The second doping layers surround the columnar channel and are connected to the channel layers. The first dielectric layer is between the first doping layer and the gate layers. The second dielectric layers are between the second doping layers and the gate layers. The third dielectric layer is between the columnar channel and the second doping layers. The fourth dielectric layers are between the channel layers and the gate layers.

Memory structure, manufacturing method thereof, and operating method thereof

The integrated circuit structure includes a substrate and a first resistive memory string over the substrate. The first resistive memory string includes memory cells, and each of the memory cells includes a word line transistor and a resistor. The word line transistor includes a channel region, a gate over the channel region, and a plurality of source/drain regions on opposite sides of the channel region. The resistor is over the word line transistor and is connected with the word line transistor in parallel. The word line transistors of two adjacent memory cells share a same one of the source/drain regions, and the memory cells are connected in series using the sharing ones of the source/drain regions.

Integrated circuit structure and method for operating the same

A memory device and an in-memory search method thereof are provided. The memory device includes a first memory cell block, a second memory cell block, at least one search memory cell pair, and a sense amplifier. The search memory cell pair includes a first search memory cell and a second search memory cell. The first search memory cell and the second search memory cell are respectively disposed in the first memory cell block and the second memory cell block. The first search memory cell and the second search memory cell respectively receive a first search voltage and a second search voltage. The first search voltage and the second search voltage are generated according to searched data. The sense amplifier generates a search result according to signals on a first bit line and a second bit line.

Memory device and in-memory search method thereof

An in-memory computation device and computation method are provided. The in-memory computation method includes: providing a memory cell block of a memory cell array to store a plurality of weight values, and providing a plurality of memory cells on the memory cell block to store a plurality of corresponding bits of each of the weight values; respectively transmitting a plurality of input signals to the plurality of bit lines through an input buffer; providing the plurality of memory cells to perform a multiplication operation of the plurality of input signals and the plurality of weight values to generate a plurality of first operation results respectively corresponding to a plurality of bit orders; and performing an addition operation on the plurality of first operation results to generate a second operation result according to the plurality of bit orders by a sense amplifier.

In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders

An in-memory computing memory device includes: a plurality of computing memory cells forming a plurality of memory strings, the computing memory cells storing a plurality of weight values; a loading capacitor; and a measurement circuit. In IMC operations, a plurality of input voltages, corresponding to a plurality of input values, are input into the computing memory cells; a plurality of effective resistances of the computing memory cells are corresponding to the input voltages and the weight values; when a read voltage is applied to the plurality of computing memory cells, the computing memory cells generate a plurality of cell currents which are summed into a plurality of memory string currents for charging the loading capacitor; and based a capacitor voltage of the loading capacitor, at least one delay time and a predetermined voltage, an operation result of the input values and the weight values is determined.

In-memory computing (IMC) memory device and in-memory computing method

An in-memory computing (IMC) memory device and an IMC method are provided. The IMC memory device includes: a plurality of memory cells, the memory cells forming a plurality of computing layers; and a plurality of computing layer connectors, the computing layer connectors connecting between the computing layers. A first computing layer input is inputted into a first computing layer of the computing layers. The first computing layer generates a first computing layer output. A first computing layer connector of the computing layer connectors converts the first computing layer output into a second computing layer input. The first computing layer connector inputs the second computing layer input into a second computing layer of the computing layers. The computing layer connectors are a plurality of inverters, a plurality of voltage-to-voltage converters or a plurality of current-to-voltage converters.

In memory computing (IMC) memory device and method

A universal memory for In-Memory Computing and an operation method thereof are provided. The universal memory includes at least one write word line, at least one unit cell and at least one read word line. The unit cell includes a write transistor and a read transistor. The gate of the write transistor is connected to the write word line. The write transistor is a transistor with adjustable threshold voltage. The gate of the read transistor is connected to the drain or the source of the write transistor. The read word line is connected to the drain or the source of the read transistor. The universal memory is used for a training mode and an inference mode. In the training mode and the inference mode, a weight is stored at different locations of the unit cell.

Universal memory for in-memory computing and operation method thereof

An integrated circuit structure includes a substrate, an interconnect stack, a first memory array, and a source line. The interconnect stack is over the substrate. The first memory array is over the interconnect stack and includes memory elements stacked in a vertical direction each comprising a conductive layer. The first memory array further includes a memory layer electrically connecting to the conductive layers of the memory elements and extending downwardly from a topmost one of the conductive layers to a lowermost one of the conductive layers; and a channel layer extending along a sidewall of the memory layer. The source line is in contact with a top end of the channel layer and laterally extends across the first memory array.

Memory device and method for forming the same

A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. In the first operation, a first electric field is produced in a portion of the memory layers. The word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.

Memory device and method for operating the same

An in-memory computation device includes multiple computation blocks, a first reference weight block, and an output result generator. The computation blocks have multiple weighting values, receive multiple input signals respectively, and generate multiple computation results. Each of the computation blocks generates each of the computation results according to each of the corresponding input signals and corresponding weighting values. The first reference weight block provides a first reference resistance according to multiple reference weighting values and generates a first reference signal according to the first reference resistance and a read voltage. The output result generator generates multiple output computation results according to the first reference signal and the computation results.

In-memory computation device

A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. The current sensing units are coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units. Each memory cell includes a first transistor, a second transistor and an inverter. The first search line is coupled to the second search line by the inverter.

Ternary content addressable memory and decision generation method for the same

A memory device and a method for operating the same are provided. The memory device includes a plurality of resistive memory cells and a control circuitry electrically connected to the plurality of resistive memory cells. The control circuitry provides operation modes to operate the plurality of resistive memory cells. The operation modes include a first program operation and a refresh operation. The first program operation includes applying a first program bias voltage to a selected resistive memory cell of the plurality of resistive memory cells to establish a low-resistance state in the selected resistive memory cell. The first program operation establishes a first threshold voltage in the memory device. The refresh operation includes applying a refresh bias voltage to the selected resistive memory cell to refresh the selected resistive memory cell. An absolute value of the refresh bias voltage is greater than the first threshold voltage.

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Hsinchu, Taiwan

Feng-Min Lee