HSINCHU, Taiwan

I-ming Chang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 6.2

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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4 patents (USPTO):Explore Patents

Title: I-ming Chang: Innovator in Semiconductor Technology

Introduction

I-ming Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

I-ming Chang's latest patents include innovative designs that improve semiconductor devices. One of his notable patents is titled "Dipoles in Semiconductor Devices." This invention describes a semiconductor device that consists of a substrate, an interfacial layer, and a high-k dielectric layer. The high-k dielectric layer and the interfacial layer are doped with multiple dopant species, creating dipole elements that enhance device performance. Another significant patent is the "Semiconductor Structure," which outlines a structure featuring fin designs and dielectric layers that optimize the electrical characteristics of the device.

Career Highlights

I-ming Chang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

I-ming Chang has worked alongside notable colleagues such as Yao-Sheng Huang and Hung-Chang Sun. Their collaborative efforts have further propelled innovation within the semiconductor field.

Conclusion

I-ming Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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