Taiwan Semiconductor Manufacturing Comp. Ltd.

I-ming Chang

Yao-Sheng Huang

Chung-Liang Cheng

Huang-Lin Chao

Hung-Chang Sun

Hsiang-Pi Chang

Ziwei Fang

Tzer-Min Shen

Zi-Wei Fang

Fang-Wei Lee

Yen-Tien Tung

Yu-Wei Lu

Dawei Heh

A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.

Dipoles in semiconductor devices

A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.

Semiconductor structure

A semiconductor device includes a semiconductor fin, a gate structure, a doped semiconductor layer, and a dielectric structure. The semiconductor fin has a top portion and a lower portion extending from the top portion to a substrate. The gate structure extends across the semiconductor fin. The doped semiconductor layer interfaces the top portion of the semiconductor fin. In a cross-section taken along a lengthwise direction of the gate structure, the doped semiconductor layer has an outer profile conformal to a profile of the top portion of the semiconductor fin.

Semiconductor device with conformal source/drain layer

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I-ming Chang