The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
May. 25, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
I-Ming Chang, Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
Hsiang-Pi Chang, New Taipei, TW;
Hung-Chang Sun, Kaohsiung, TW;
Yao-Sheng Huang, Kaohsiung, TW;
Yu-Wei Lu, Taipei, TW;
Fang-Wei Lee, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer disposed on the first channel layer and a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes Ge compound of a first Ge concentration, the second channel layer in the second region includes Ge compound of a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer.