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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040364 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Apr. 10, 2023

Semiconductor device structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsueh-Wen Tsau, Miaoli County, TW;

Chun-I Wu, Taipei, TW;

Ziwei Fang, Hsinchu, TW;

Huang-Lin Chao, Hillsboro, OR (US);

I-Ming Chang, ShinChu, TW;

Chung-Liang Cheng, Changhua County, TW;

Chih-Cheng Lin, Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28247 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/28088 (2013.01); H01L 21/28568 (2013.01); H01L 23/5226 (2013.01); H01L 29/0673 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer includes an oxide material.

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