The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Feb. 26, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/0259 (2013.01); H01L 21/02236 (2013.01); H01L 21/02252 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/823807 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract
Embodiments of the present disclosure provide a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. In some embodiments, after forming a first type of source/drain features, a self-aligned mask layer is formed over the first type of source/drain features without using photolithography process, thus, avoid damaging the first type of source/drain features in the patterning process.