The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Feb. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yasutoshi Okuno, Hsinchu, TW;
Cheng-Yi Peng, Taipei, TW;
Ziwei Fang, Hsinchu, TW;
I-Ming Chang, Hsinchu, TW;
Akira Mineji, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Meng-Hsuan Hsiao, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/203 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/2033 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes SiM1M2, where M1 includes Sn, M2 is one or more of P and As, 0.01≤x≤0.1, and 0.01≤y≤0.