logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Meng-Hsuan Hsiao

This inventor holds 41 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Meng-Hsuan Hsiao. Retrieved from https://idiyas.com/inventor/meng-hsuan-hsiao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 46(Granted Patents)


Company Filing History:

goldMedal41 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Structure
Fin-FET Technology
Gate-All-Around
Epitaxy Layers
Nanowire Stack
2D Material Layer
Integrated Device
Source/Drain Structure
Fabrication Method
Local Epitaxy
Manufacturing Method
41 patents (USPTO):Explore Patents
1. 12376345 - Semiconductor structure (2025-07-29),
2. 12356667 - Separate epitaxy layers for nanowire stack GAA device (2025-07-08),
3. 12191304 - Method of manufacturing a semiconductor device and a semiconductor device (2025-01-07),
4. 12142638 - Semiconductor structure (2024-11-12),
5. 12021153 - Semiconductor structure (2024-06-25),
6. 11935890 - Method for forming integrated semiconductor device with 2D material layer (2024-03-19),
7. 11855141 - Local epitaxy nanofilms for nanowire stack GAA device (2023-12-26),
8. 11798945 - Semiconductor structure (2023-10-24),
9. 11764267 - Semiconductor device and fabricating method thereof (2023-09-19),
10. 11742405 - Separate epitaxy layers for nanowire stack GAA device (2023-08-29),
11. 11728414 - Semiconductor device including a Fin-FET and method of manufacturing the same (2023-08-15),
12. 11728384 - Method for manufacturing semiconductor structure (2023-08-15),
13. 11695006 - Method of manufacturing a semiconductor device and a semiconductor device (2023-07-04),
14. 11605633 - Semiconductor device (2023-03-14),
15. 11545582 - Method for forming gate-all-around structure (2023-01-03),

Title: The Innovative Journey of Meng-Hsuan Hsiao

Introduction: Meng-Hsuan Hsiao, a talented inventor hailing from Hsinchu, Taiwan, has been making significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Meng-Hsuan Hsiao's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and sustainable energy solutions.

Career Highlights: With a background in electrical engineering and computer science, Meng-Hsuan Hsiao has worked for leading tech companies in Taiwan, where she spearheaded projects that have received international recognition for their ingenuity.

Collaborations: Throughout her career, Meng-Hsuan Hsiao has collaborated with top researchers from universities and research institutions worldwide, fostering a culture of innovation and knowledge exchange.

Conclusion: Meng-Hsuan Hsiao's dedication to pushing the boundaries of technology and her passion for creating solutions that improve lives make her a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…