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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855141 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Apr. 06, 2021

Local epitaxy nanofilms for nanowire stack gaa device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ling-Yen Yeh, Hsinchu, TW;

Meng-Hsuan Hsiao, Hsinchu, TW;

Yuan-Chen Sun, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Thanhha S Pham

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01); H01L 29/167 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/31051 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/167 (2013.01); H01L 29/42392 (2013.01);
Abstract

The disclosed technique forms epitaxy layers locally within a trench having angled recesses stacked in the sidewall of the trench. The sizes of the recesses are controlled to control the thickness of the epitaxy layers to be formed within the trench. The recesses are covered by cap layers and exposed one by one sequentially beginning from the lowest recess. The epitaxy layers are formed one by one within the trench with the facet edge portion thereof aligned into the respective recess, which is the recess sequentially exposed for the epitaxy layer.

Find Patent Forward Citations

Yeh, Ling-Yen. (2023). Local epitaxy nanofilms for nanowire stack gaa device (U.S. Patent No. 11855141). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11855141

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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