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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yuan-Chen Sun

This inventor holds 16 USPTO granted patents and 2 published patent applications, primarily in Field-Effect Transistors. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2001-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuan-Chen Sun. Retrieved from https://idiyas.com/inventor/yuan-chen-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 81.3

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 77(Granted Patents)


Location History:

  • Taipei, TW (2009)
  • Hsin-Chu, TW (2001 - 2024)

Company Filing History:

goldMedal16 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2001-2024

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Areas of Expertise:
Dopant Deactivation
Field-Effect Transistors
Nanowire Stack
GAA Device
Transition Metal Dichalcogenide
Conformal Contacts
3D Semiconductor Bonding
MOSFET Devices
Source/Drain Regions
Stressed Regions
16 patents (USPTO):Explore Patents
1. 12068374 - Method of dopant deactivation underneath gate (2024-08-20),
2. 11855141 - Local epitaxy nanofilms for nanowire stack GAA device (2023-12-26),
3. 11410996 - Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture (2022-08-09),
4. 11164864 - Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture (2021-11-02),
5. 11063128 - Conformal source and drain contacts for multi-gate field effect transistors (2021-07-13),
6. 11043556 - Local epitaxy nanofilms for nanowire stack GAA device (2021-06-22),
7. 10985246 - MOSFET with selective dopant deactivation underneath gate (2021-04-20),
8. 10269791 - Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture (2019-04-23),
9. 10164033 - Conformal source and drain contacts for multi-gate field effect transistors (2018-12-25),
10. 10157985 - MOSFET with selective dopant deactivation underneath gate (2018-12-18),
11. 9614086 - Conformal source and drain contacts for multi-gate field effect transistors (2017-04-04),
12. 9153662 - MOSFET with selective dopant deactivation underneath gate (2015-10-06),
13. 9123553 - Method and system for bonding 3D semiconductor device (2015-09-01),
14. 8048717 - Method and system for bonding 3D semiconductor devices (2011-11-01),
15. 7612364 - MOS devices with source/drain regions having stressed regions and non-stressed regions (2009-11-03),

Title: The Innovative Journey of Inventor Yuan-Chen Sun

Introduction: Yuan-Chen Sun, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Yuan-Chen Sun holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on cutting-edge developments in nanotechnology and artificial intelligence.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Yuan-Chen Sun has had a distinguished career marked by groundbreaking inventions. He has worked for leading tech companies and research institutions, where his innovative spirit has led to the creation of revolutionary technologies.

Collaborations: Yuan-Chen Sun is known for his collaborative efforts with fellow inventors, researchers, and industry experts. His ability to work effectively in multidisciplinary teams has resulted in the successful development and commercialization of numerous inventions.

Conclusion: In conclusion, Yuan-Chen Sun's relentless pursuit of innovation and his commitment to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His groundbreaking work continues to inspire future generations of innovators to dream big and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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