The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Nov. 20, 2006
Applicants:
Harry Chuang, Austin, TX (US);
Kong-beng Thei, Hsin-Chu, TW;
Yuan-chen Sun, Taipei, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a stressor having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the stressor comprises an impurity of a first conductivity type; and a portion of the semiconductor substrate adjoining the stressor and on an opposite side of the stressor from the gate stack, wherein the portion of the semiconductor substrate is doped with an impurity of the first conductivity type.