The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 13, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Kai-Chieh Yang, Hsinchu, TW;
Ken-Ichi Goto, Hsinchu, TW;
Wei-Hao Wu, Hsinchu, TW;
Yuan-Chen Sun, Hsinchu, TW;
Zhiqiang Wu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1041 (2013.01); H01L 29/1045 (2013.01); H01L 29/1608 (2013.01); H01L 29/66537 (2013.01); H01L 29/66651 (2013.01); H01L 29/7833 (2013.01); H01L 21/26506 (2013.01); H01L 21/2658 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of fabricating a device on a substrate includes doping a channel region of the device with dopants. The method further includes growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region. The method further includes forming a gate structure over the deactivated region.