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Kai-Chieh Yang

This inventor holds 46 USPTO granted patents and 5 published patent applications, primarily in FinFET Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Chimei Innolux Corporation, Tpo Displays Corporation. Active years: 2009-2026.

USPTO Granted Patents = 46 (Patent Applications = 5)

% Patents Active = 93.5

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 3,973(Granted Patents)

Location History:

Niaosong Township, TW (2012)
Miao-Li County, TW (2012 - 2013)
Chu-Nan, TW (2012 - 2013)
Kaohsiung County, TW (2013)
Niaosong Township, Kaohsiung County, TW (2013 - 2014)
Hsinchu County, TW (2017)
Zhubei, TW (2013 - 2021)
Kaohsiung, TW (2009 - 2024)
Tainan, TW (2021 - 2024)
Hsinchu, TW (2024)

Company Filing History:

35 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

8 out of 601

Chimei Innolux Corporation

patents

2 out of 189

Tpo Displays Corporation

patents

4. 1 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2009-2026

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Areas of Expertise:

FinFET

Semiconductor Device

Vertical Structure

Image Display System

Touch Display Panel

Dopant Deactivation

Metal Gates

Integrated Circuits

Capacitance Sensing

Embedded Layers

MOSFET

Strained Spacer

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12538518 - FinFET structure with fin top hard mask and method of forming the same (2026-01-27),

2. 12490476 - Method and device for boosting performance of FinFETs via strained spacer (2025-12-02),

3. 12211921 - Method for forming FinFET devices with a fin top hardmask (2025-01-28),

4. 12148830 - Method and device for boosting performance of FinFETs via strained spacer (2024-11-19),

5. 12068374 - Method of dopant deactivation underneath gate (2024-08-20),

6. 12062705 - Semiconductor device and method of forming vertical structure (2024-08-13),

7. 11923457 - FinFET structure with fin top hard mask and method of forming the same (2024-03-05),

8. 11923251 - Methods of cutting metal gates and structures formed thereof (2024-03-05),

9. 11901365 - Finfet device and a method for fabricating the same (2024-02-13),

10. 11664451 - Method and device for boosting performance of FinFETs via strained spacer (2023-05-30),

11. 11545400 - Methods of cutting metal gates and structures formed thereof (2023-01-03),

12. 11532519 - Semiconductor device and method (2022-12-20),

13. 11374126 - FinFET structure with fin top hard mask and method of forming the same (2022-06-28),

14. 11227932 - FinFET devices with a fin top hardmask (2022-01-18),

15. 11152267 - Methods of cutting metal gates and structures formed thereof (2021-10-19),

Title: The Innovative Mind of Kai-Chieh Yang

Introduction: Kai-Chieh Yang, a talented inventor hailing from Kaohsiung, Taiwan, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kai-Chieh Yang has recently been granted several patents for his cutting-edge inventions in the realm of artificial intelligence and renewable energy technologies.

Career Highlights: With a career spanning over two decades, Kai-Chieh Yang has established himself as a visionary in the tech industry, with a keen focus on developing sustainable solutions for the future.

Collaborations: Throughout his career, Kai-Chieh Yang has collaborated with leading research institutions and tech companies to bring his innovative ideas to life, further solidifying his reputation as a pioneer in his field.

Conclusion: Kai-Chieh Yang's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true trailblazer in the world of technology. His contributions continue to inspire and shape the future of innovation.

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