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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Kai-Chieh Yang

This inventor holds 46 USPTO granted patents and 5 published patent applications, primarily in FinFET Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Chimei Innolux Corporation, Tpo Displays Corporation. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai-Chieh Yang. Retrieved from https://idiyas.com/inventor/kai-chieh-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 46 

% Patents Active = 93.5

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 3,973(Granted Patents)


Location History:

  • Niaosong Township, TW (2012)
  • Miao-Li County, TW (2012 - 2013)
  • Chu-Nan, TW (2012 - 2013)
  • Kaohsiung County, TW (2013)
  • Niaosong Township, Kaohsiung County, TW (2013 - 2014)
  • Hsinchu County, TW (2017)
  • Zhubei, TW (2013 - 2021)
  • Kaohsiung, TW (2009 - 2024)
  • Tainan, TW (2021 - 2024)
  • Hsinchu, TW (2024)

Company Filing History:

goldMedal35 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal8 out of 601 
 
Chimei Innolux Corporation
 patents
bronzeMedal2 out of 189 
 
Tpo Displays Corporation
 patents
4. 1 out of 503 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2009-2026

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Areas of Expertise:
FinFET
Semiconductor Device
Vertical Structure
Image Display System
Touch Display Panel
Dopant Deactivation
Metal Gates
Integrated Circuits
Capacitance Sensing
Embedded Layers
MOSFET
Strained Spacer
46 patents (USPTO):Explore Patents
1. 12538518 - FinFET structure with fin top hard mask and method of forming the same (2026-01-27),
2. 12490476 - Method and device for boosting performance of FinFETs via strained spacer (2025-12-02),
3. 12211921 - Method for forming FinFET devices with a fin top hardmask (2025-01-28),
4. 12148830 - Method and device for boosting performance of FinFETs via strained spacer (2024-11-19),
5. 12068374 - Method of dopant deactivation underneath gate (2024-08-20),
6. 12062705 - Semiconductor device and method of forming vertical structure (2024-08-13),
7. 11923457 - FinFET structure with fin top hard mask and method of forming the same (2024-03-05),
8. 11923251 - Methods of cutting metal gates and structures formed thereof (2024-03-05),
9. 11901365 - Finfet device and a method for fabricating the same (2024-02-13),
10. 11664451 - Method and device for boosting performance of FinFETs via strained spacer (2023-05-30),
11. 11545400 - Methods of cutting metal gates and structures formed thereof (2023-01-03),
12. 11532519 - Semiconductor device and method (2022-12-20),
13. 11374126 - FinFET structure with fin top hard mask and method of forming the same (2022-06-28),
14. 11227932 - FinFET devices with a fin top hardmask (2022-01-18),
15. 11152267 - Methods of cutting metal gates and structures formed thereof (2021-10-19),

Title: The Innovative Mind of Kai-Chieh Yang

Introduction: Kai-Chieh Yang, a talented inventor hailing from Kaohsiung, Taiwan, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kai-Chieh Yang has recently been granted several patents for his cutting-edge inventions in the realm of artificial intelligence and renewable energy technologies.

Career Highlights: With a career spanning over two decades, Kai-Chieh Yang has established himself as a visionary in the tech industry, with a keen focus on developing sustainable solutions for the future.

Collaborations: Throughout his career, Kai-Chieh Yang has collaborated with leading research institutions and tech companies to bring his innovative ideas to life, further solidifying his reputation as a pioneer in his field.

Conclusion: Kai-Chieh Yang's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true trailblazer in the world of technology. His contributions continue to inspire and shape the future of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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