The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
May. 04, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wang-Chun Huang, Hsinchu, TW;
Kai-Chieh Yang, Tainan, TW;
Ching-Wei Tsai, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Hao Wang, HSinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.