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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wang-Chun Huang

This inventor holds 28 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wang-Chun Huang. Retrieved from https://idiyas.com/inventor/wang-chun-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 96.4

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 19(Granted Patents)


Location History:

  • Kaohsiung, TW (2017 - 2024)
  • Hsinchu, TW (2018 - 2024)

Company Filing History:

goldMedal28 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2026

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Areas of Expertise:
Semiconductor Device
Metal Gate Stack
FinFET
Transistors
Back End of Line
Capacitor Material
Thin Bottom Channel
Nano-Sheet
Channel Layers
Manufacturing Method
Power Switch
Vertical Structure
28 patents (USPTO):Explore Patents
1. 12720821 - Semiconductor device and manufacturing method thereof (2026-08-25),
2. 12648164 - Semiconductor structure and method for manufacturing the same (2026-06-02),
3. 12598763 - Semiconductor device structure with metal gate stack (2026-04-07),
4. 12563824 - Semiconductor device (2026-02-24),
5. 12519009 - Replacement material for backside gate cut feature (2026-01-06),
6. 12484241 - Method for forming semiconductor device (2025-11-25),
7. 12376322 - Semiconductor device having thin bottom channel and manufacturing method thereof (2025-07-29),
8. 12218224 - Method for forming semiconductor device (2025-02-04),
9. 12199095 - Fin field effect transistors having vertically stacked nano-sheet (2025-01-14),
10. 12148811 - Method of fabricating a semiconductor device having capacitor material (2024-11-19),
11. 12094938 - Semiconductor device with low resistances and methods of forming such (2024-09-17),
12. 12062714 - Back end of line nanowire power switch transistors (2024-08-13),
13. 11973077 - Semiconductor device and manufacturing method thereof (2024-04-30),
14. 11901365 - Finfet device and a method for fabricating the same (2024-02-13),
15. 11894260 - Replacement material for backside gate cut feature (2024-02-06),

Title: Wang-Chun Huang: Innovator from Hsinchu

Introduction: Wang-Chun Huang is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wang-Chun Huang holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Wang-Chun Huang has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Wang-Chun Huang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing to drive progress in the field of technology.

Conclusion: Wang-Chun Huang's passion for innovation, coupled with his technical acumen, has solidified his position as a trailblazer in the world of technology, inspiring future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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