The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Mar. 26, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wang-Chun Huang, Kaohsiung City, TW;

Hou-Yu Chen, Hsinchu County, TW;

Kuan-Lun Cheng, Hsinchu City, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

A device includes a channel layer, a gate structure, a first source/drain structure, a second source/drain structure, and a backside via. The gate structure surrounds the channel layer. The first source/drain structure and the second source/drain structure ate connected to the channel layer. The backside via is connected to a backside of the first source/drain structure. The backside via includes a first portion, a second portion, and a third portion. The first portion is connected to the backside of the first source/drain structure. The third portion tapers from the second portion to the first portion. A sidewall of the third portion is more inclined than a sidewall of the second portion.


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