The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Apr. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wang-Chun Huang, Kaohsiung, TW;

Ching-Wei Tsai, Hsinchu, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Chih-Hao Wang, Baoshan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0243 (2025.01); H10D 30/62 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes multiple first semiconductor nanostructures over a first semiconductor fin and multiple second semiconductor nanostructures over a second semiconductor fin. A topmost second semiconductor nanostructure of the second semiconductor nanostructures is thinner than one or more of lower semiconductor nanostructures of the second semiconductor nanostructures. The semiconductor device structure also includes a first metal gate stack wrapped around the first semiconductor nanostructures. The semiconductor device structure further includes a second metal gate stack wrapped around the second semiconductor nano structures.


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