The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Nov. 30, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Hao Wang, Baoshan Township, TW;
Shi-Ning Ju, Hsinchu, TW;
Kai-Chieh Yang, Kaohsiung, TW;
Wen-Ting Lan, Hsinchu, TW;
Wai-Yi Lien, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/0649 (2013.01);
Abstract
According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.