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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Ting Lan

This inventor holds 32 USPTO granted patents and 30 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Ting Lan. Retrieved from https://idiyas.com/inventor/wen-ting-lan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 96.9

Average Co-Inventor Count = 5.2

ph-index = 3

Forward Citations = 48(Granted Patents)


Company Filing History:

goldMedal31 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2017-2026

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Areas of Expertise:
Semiconductor Device
Backside Power Rail
Wafer Bonding
Nanosheet Channels
Integrated Circuits
Fin Structures
Capacitance Reduction
Hybrid Nanostructures
Vertical Structure
Memory Device
Power Rail Structure
32 patents (USPTO):Explore Patents
1. 12751065 - Semiconductor structure and method for forming the same (2026-09-29),
2. 12751029 - Structure and formation method of semiconductor device with power rail (2026-09-29),
3. 12648176 - Capacitance reduction for back-side power rail device (2026-06-02),
4. 12575464 - Method of forming wafer-to-wafer bonding structure (2026-03-10),
5. 12568775 - Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrate (2026-03-03),
6. 12482785 - Trim free wafer bonding methods and devices (2025-11-25),
7. 12402405 - Integration of multiple fin stuctures on a single substrate (2025-08-26),
8. 12396246 - Semiconductor integrated circuit including gate-all-around FETs with nanosheet channels and Fin-like FETs (2025-08-19),
9. 12317542 - Semiconductor device with backside self-aligned power rail and methods of forming the same (2025-05-27),
10. 12183678 - Backside power rail structure and methods of forming same (2024-12-31),
11. 12062705 - Semiconductor device and method of forming vertical structure (2024-08-13),
12. 12057477 - Semiconductor structure with hybrid nanostructures (2024-08-06),
13. 12057385 - Integrated circuits with backside power rails (2024-08-06),
14. 12040329 - Semiconductor device structure and methods of forming the same (2024-07-16),
15. 11973079 - Integration of multiple fin structures on a single substrate (2024-04-30),

Title: Exploring the Innovations of Inventor Wen-Ting Lan

Introduction:

In the realm of semiconductor technology, one name shines brightly - that of inventor Wen-Ting Lan from Hsinchu, Taiwan. With a total of 22 patents to his name, Lan is paving the way for cutting-edge developments in the field.

Latest Patents:

Wen-Ting Lan's recent patents showcase his ingenuity and expertise. One such patent is for a "Semiconductor device and method of forming vertical structure," which introduces a novel approach to enhancing vertical structures in semiconductor devices. Another patent, "Semiconductor structure with hybrid nanostructures," demonstrates his proficiency in integrating nanostructures into semiconductor designs with finesse.

Career Highlights:

Lan is associated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), where his innovative spirit has found a nurturing environment for growth and exploration. His contributions to the company's advancements in semiconductor technology are invaluable, shaping the industry's future.

Collaborations:

In his professional journey, Wen-Ting Lan has had the privilege of collaborating with esteemed colleagues such as Chih-Hao Wang and Shi Ning Ju. Together, they have fostered a culture of innovation and excellence, leading to groundbreaking developments in semiconductor technology.

Conclusion:

Inventor Wen-Ting Lan's relentless pursuit of innovation and his significant contributions to the semiconductor industry position him as a trailblazer in the field. His patents not only reflect his technical prowess but also highlight his visionary approach towards shaping the future of semiconductor technology. As he continues to push boundaries and explore new frontiers, the impact of his work resonates across the industry, inspiring others to reach for greater heights in innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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