The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Apr. 08, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shi Ning Ju, Hsinchu City, TW;
Chih-Hao Wang, Baoshan Township, TW;
Kuo-Cheng Chiang, Zhubei City, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Wen-Ting Lan, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor transistor device including a channel structure, gate structure, a first source/drain structure, a second source/drain structure, and a back-side source/drain contact. The gate structure overlies the channel structure. The first source/drain structure and the second source/drain structure are disposed on opposite endings of the channel structure. The back-side source/drain contact is disposed under the first source/drain structure. A line lies across the gate structure and the first source/drain structure. The line is parallel to an upper surface of the gate structure.