The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Jul. 14, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Ting Lan, Hsinchu City, TW;

Lin-Yu Huang, Hsinchu, TW;

Shi-Ning Ju, Hsinchu City, TW;

Kuo-Cheng Chiang, Zhubei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6735 (2025.01); H10D 84/0147 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10W 20/20 (2026.01);
Abstract

A semiconductor device structure and a formation method are provided. The method includes forming a first fin structure and a second fin structure over a substrate. The method also includes partially removing the substrate to form a trench between the first fin structure and the second fin structure and forming a sacrificial structure to fill the trench. The method further includes forming an epitaxial structure on the first fin structure and forming a conductive contact over the epitaxial structure and the sacrificial structure. In addition, the method includes replacing the sacrificial structure with a conductive structure.


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