The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Apr. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wen-Ting Lan, Hsinchu, TW;

Kuan-Ting Pan, Hsinchu, TW;

Shi Ning Ju, Hsinchu, TW;

Kuo-Cheng Chiang, Hsinchu County, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/6735 (2025.01); H10D 84/0158 (2025.01);
Abstract

According to one example, a semiconductor device includes a first region comprising a plurality of nanosheets vertically stacked above a substrate, a second region comprising a fin protruding from the substrate, a first gate structure wrapping around each of the nanosheets, and a second gate structure disposed over the top surface and sidewalls of the fin. A top surface of a topmost nanosheet of the plurality of nanosheets is vertically offset from a top surface of the fin.


Find Patent Forward Citations

Lan, Wen-Ting. (2025). Semiconductor integrated circuit including gate-all-around fets with nanosheet channels and fin-like fets (U.S. Patent No. 12396246). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12396246

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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