The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Mar. 29, 2012
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Kai-chieh Yang, Zhubei, TW;
Wei-hao Wu, Hsinchu, TW;
Ken-ichi Goto, Hsinchu, TW;
Zhiqiang Wu, Chubei, TW;
Yuan-chen Sun, Hsinchu, TW;
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Kai-Chieh Yang, Zhubei, TW;
Wei-Hao Wu, Hsinchu, TW;
Ken-Ichi Goto, Hsinchu, TW;
Zhiqiang Wu, Chubei, TW;
Yuan-Chen Sun, Hsinchu, TW;
Abstract
A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET) device on a substrate includes doping a channel region of the MOSFET device with dopants of a first type. A source and a drain are formed in the substrate with dopants of a second type. Selective dopant deactivation is performed in a region underneath a gate of the MOSFET device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile