The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Nov. 28, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Dhanyakumar Mahaveer Sathaiya, Hsinchu, TW;
Kai-Chieh Yang, Zhubei, TW;
Wei-Hao Wu, Hsinchu, TW;
Ken-Ichi Goto, Hsinchu, TW;
Zhiqiang Wu, Chubei, TW;
Yuan-Chen Sun, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1041 (2013.01); H01L 29/1045 (2013.01); H01L 29/1608 (2013.01); H01L 29/66537 (2013.01); H01L 29/66651 (2013.01); H01L 29/7833 (2013.01); H01L 21/2658 (2013.01); H01L 21/26506 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes a channel region comprising dopants, a gate structure over the channel region and a deactivated region underneath the gate structure and partially within the channel region. Dopants within the deactivated region are deactivated. The deactivated region includes carbon. The deactivated region is physically separated from a top surface of a substrate by a portion of the substrate that is free of carbon.