The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Dec. 17, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Chih-Hao Wang, Hsinchu County, TW;
Ling-Yen Yeh, Hsinchu, TW;
Yuan-Chen Sun, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a fin having a first semiconductor material, the fin having a source/drain (S/D) region and a channel region, the S/D region providing a top surface and two sidewall surfaces; an isolation structure surrounding a bottom portion of the fin, wherein the S/D region of the fin above the isolation structure has a step profile in each of the two sidewall surfaces; a semiconductor film over the S/D region and having a doped second semiconductor material, the semiconductor film providing a top surface and two sidewall surfaces over the top and two sidewall surfaces of the fin respectively, wherein the doped second semiconductor material is different from the first semiconductor material; and a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.