The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Winnie Victoria Wei-Ning Chen, Zhubei, TW;

Meng-Hsuan Hsiao, Hsinchu, TW;

Tung-Ying Lee, Hsinchu, TW;

Pang-Yen Tsai, Jhu-bei, TW;

Yasutoshi Okuno, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/02636 (2013.01); H01L 21/30625 (2013.01); H01L 21/823807 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); H01L 29/42392 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over the substrate. The semiconductor device further includes a first channel layer and a second channel layer and a first insulating structure interposing the first channel layer and the semiconductor layer and a second insulating structure interposing the first channel layer and the second channel layer. The semiconductor device further includes a gate stack abutting the first channel layer and the second channel layer, and the gate stack includes a first portion vertically sandwiched between the first channel layer and the semiconductor layer and a second portion vertically sandwiched between the first channel layer and the second channel layer.


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