Zhubei, Taiwan

Winnie Victoria Wei-Ning Chen

This inventor holds 18 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Structures. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Winnie Victoria Wei-Ning Chen. Retrieved from https://idiyas.com/inventor/winnie-victoria-wei-ning-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Milpitas, CA (US) (2020)
  • Hsinchu, TW (2023)
  • Zhubei, TW (2020 - 2024)
  • Hsinchu County, TW (2022 - 2024)

Company Filing History:


Years Active: 2020-2025

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Areas of Expertise:
Semiconductor Structure
Epitaxial Structures
Gate-All-Around
Interface Profile Control
Epitaxial Growth
Manufacturing Method
Device Manufacturing
Stacked Devices
Control Methods
Semiconductor Devices
18 patents (USPTO):Explore Patents

Title: Innovations by Winnie Victoria Wei-Ning Chen in Semiconductor Technology

Introduction

Winnie Victoria Wei-Ning Chen, based in Zhubei, Taiwan, is a renowned inventor with a significant portfolio of 18 patents to his name. His work primarily focuses on advancing semiconductor structures and their applications, contributing to the ever-evolving field of technology.

Latest Patents

Winnie’s latest patents showcase his innovative approach to semiconductor structures. One of his patents describes a semiconductor structure that includes multiple nanowires arranged in a unique configuration. This structure features a first nanowire positioned over a semiconductor fin, with additional nanowires layered above it. Notably, a source/drain component wraps around these nanowires, exhibiting varying thicknesses that optimize the device’s performance.

Another patent outlines methods for forming a semiconductor structure that integrates a substrate with a protruding fin. This design incorporates a well region and an anti-punch through region, ensuring enhanced functionality. Barrier layers and channel layers work together to provide improved efficiency, while additional features such as a gate that wraps around the channel layers further refine the design.

Career Highlights

Winnie Victoria Wei-Ning Chen is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading organization in the semiconductor industry. His role within this innovative environment has allowed him to push the boundaries of semiconductor technology and develop groundbreaking inventions.

Collaborations

Throughout his career, Winnie has collaborated closely with fellow inventors Meng-Hsuan Hsiao and Tung Ying Lee. Their teamwork has resulted in the successful advancement of various semiconductor technologies, fostering an environment of creativity and innovation within their projects.

Conclusion

Winnie Victoria Wei-Ning Chen's contributions to semiconductor technology exemplify the power of innovation and collaboration in the field. His extensive patent portfolio and collaborative efforts with esteemed colleagues highlight his significant role in shaping the future of this vital industry. As technology continues to evolve, Winnie’s work will undoubtedly pave the way for new advancements and applications in semiconductor structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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