The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Mar. 04, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Winnie Victoria Wei-Ning Chen, Zhubei, TW;
Meng-Hsuan Hsiao, Hsinchu, TW;
Tung-Ying Lee, Hsinchu, TW;
Pang-Yen Tsai, Jhu-bei, TW;
Yasutoshi Okuno, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device is provided. The method includes forming a first recess in a substrate. The method includes forming a first semiconductor layer into the first recess. The first semiconductor layer and the substrate are made of different materials, and a first top surface of the first semiconductor layer is lower than a second top surface of the substrate. The method includes forming a second semiconductor layer over the first top surface and the second top surface, wherein a third top surface of the second semiconductor layer over the first top surface is substantially level with the second top surface of the substrate, and the second semiconductor layer and the substrate are made of different materials. The method includes forming a third semiconductor layer over the second semiconductor layer. The third semiconductor layer and the second semiconductor layer are made of different materials.