The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

May. 22, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Hsuan Hsiao, Hsinchu, TW;

Wei-Sheng Yun, Taipei, TW;

Winnie Victoria Wei-Ning Chen, Zhubei, TW;

Tung Ying Lee, Hsinchu, TW;

Ling-Yen Yeh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/83 (2025.01); H10D 64/017 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.


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