The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Oct. 30, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Chieh Lu, Taipei, TW;
Meng-Hsuan Hsiao, Hsinchu, TW;
Tung-Ying Lee, Hsinchu, TW;
Ling-Yen Yeh, Hsinchu, TW;
Chih-Sheng Chang, Hsinchu, TW;
Carlos H. Diaz, Los Altos Hills, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/465 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H10B 12/00 (2023.01); H10B 51/00 (2023.01); H10B 51/40 (2023.01); H10B 63/00 (2023.01); H01L 29/10 (2006.01); H01L 23/31 (2006.01); H01L 29/51 (2006.01); H01L 29/08 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 21/441 (2006.01); H01L 27/092 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 21/76802 (2013.01); H01L 21/76897 (2013.01); H01L 23/3171 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0642 (2013.01); H01L 29/0843 (2013.01); H01L 29/0847 (2013.01); H01L 29/105 (2013.01); H01L 29/516 (2013.01); H01L 29/66787 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/78391 (2014.09); H01L 29/78603 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H10B 12/056 (2023.02); H10B 12/36 (2023.02); H10B 51/00 (2023.02); H10B 51/40 (2023.02); H10B 63/34 (2023.02); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/0273 (2013.01); H01L 21/02112 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02521 (2013.01); H01L 21/02568 (2013.01); H01L 21/31053 (2013.01); H01L 29/0653 (2013.01); H01L 29/24 (2013.01);
Abstract
A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.