The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 26, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chung-Liang Cheng, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Li-Zhen Yu, Hsinchu, TW;
Huang-Lin Chao, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); H01L 21/76846 (2013.01); H01L 21/76867 (2013.01); H10D 30/6729 (2025.01); H10D 64/01 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01);
Abstract
A method is provided for forming a contact plug by bottom-up metal growth. In one step, a substrate is etched to form a contact hole that exposes a silicon-containing feature in the substrate. In one step, a silicide layer is formed on the silicon-containing feature. In one step, a metal seed layer is formed over the silicide layer. In one step, a metal contact layer is deposited over the metal seed layer to form the contact plug in the contact hole.