The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Nov. 28, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsueh Wen Tsau, Miaoli County, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hsinchu, TW;
Kuo-Liang Sung, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes an interfacial layer disposed over a semiconductor channel region, a metal oxide layer disposed over the interfacial layer, a high-k gate dielectric layer disposed over the metal oxide layer, a metal halide layer disposed over the high-k gate dielectric layer, and a metal gate electrode disposed over the high-k gate dielectric layer. The metal oxide layer and the interfacial layer form a dipole moment. The metal oxide layer includes a first metal. The metal halide layer includes a second metal different from the first metal.