Hsueh Wen Tsau

This inventor holds 38 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsueh Wen Tsau. Retrieved from https://idiyas.com/inventor/hsueh-wen-tsau

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 (Patent Applications = 2)

% Patents Active = 81.6

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 82(Granted Patents)

Location History:

Zhunan Township, Miaoli County, TW (2012 - 2013)
Zhuan Township, TW (2015 - 2017)
Zhunan Township, TW (2013 - 2024)
Zhunan, TW (2016 - 2024)
Miaoli County, TW (2022 - 2024)

Company Filing History:

38 out of 42,810

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2012-2025

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Areas of Expertise:

Field-Effect Transistors

Threshold Voltage Tuning

Copper Contact Plugs

Metal Gates

Barrier Layers

Atomic Layer Deposition

Capping Layer

Stressor Materials

Gate Replacement

Sidewall Passivation

Semiconductor Fabrication

Impurity Variation

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12484277 - Tuning threshold voltage in field-effect transistors (2025-11-25),

2. 12389674 - Low resistance fill metal layer material as stressor in metal gates (2025-08-12),

3. 12046657 - Method of manufacturing a semiconductor device including capping layer, barrier layer and work function layer (2024-07-23),

4. 12033893 - Contact plug with impurity variation (2024-07-09),

5. 11935957 - Geometry for threshold voltage tuning on semiconductor device (2024-03-19),

6. 11923367 - Low resistance fill metal layer material as stressor in metal gates (2024-03-05),

7. 11855181 - Tuning threshold voltage in field-effect transistors (2023-12-26),

8. 11769694 - Contact plug with impurity variation (2023-09-26),

9. 11404416 - Low resistance fill metal layer material as stressor in metal gates (2022-08-02),

10. 11404312 - Contact plug with impurity variation (2022-08-02),

11. 11257923 - Tuning threshold voltage in field-effect transistors (2022-02-22),

12. 11251131 - Copper contact plugs with barrier layers (2022-02-15),

13. 11211465 - Semiconductor device having gate dielectric and inhibitor film over gate dielectric (2021-12-28),

14. 11127836 - Metal gate scheme for device and methods of forming (2021-09-21),

15. 11094828 - Geometry for threshold voltage tuning on semiconductor device (2021-08-17),

Title: The Innovative Journey of Inventor Hsueh Wen Tsau

Introduction: Hsueh Wen Tsau, a talented inventor hailing from Zhunan, Taiwan, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Hsueh Wen Tsau's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar panels with increased efficiency and durability.

Career Highlights: Throughout her illustrious career, Hsueh Wen Tsau has been recognized for her pioneering work in sustainable energy solutions. Her inventions have not only revolutionized the industry but have also paved the way for a more environmentally friendly future.

Collaborations: Hsueh Wen Tsau has collaborated with leading research institutions and universities to further enhance her inventions. Her partnerships have led to the successful implementation of her technologies on a global scale.

Conclusion: Inventor Hsueh Wen Tsau's dedication to innovation and sustainability continues to inspire the next generation of inventors. Her remarkable achievements solidify her position as a trailblazer in the field of renewable energy technologies.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: