The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Dec. 16, 2019
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Mrunal A. Khaderbad, Hsinchu, TW;
Hsueh Wen Tsau, Zhunan Township, TW;
Chia-Ching Lee, New Taipei, TW;
Da-Yuan Lee, Jhubei, TW;
Hsiao-Kuan Wei, Longtan Township, TW;
Chih-Chang Hung, Hsin-Chu, TW;
Huicheng Chang, Tainan, TW;
Weng Chang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Abstract
One or more semiconductor devices are provided. The semiconductor device comprises a gate body, a conductive prelayer over the gate body, at least one inhibitor film over the conductive prelayer and a conductive layer over the at least one inhibitor film, where the conductive layer is tapered so as to have a top portion width that is greater than the bottom portion width. One or more methods of forming a semiconductor device are also provided, where an etching process is performed to form a tapered opening such that the tapered conductive layer is formed in the tapered opening.