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For the Inventor, By the Inventor

Tainan, Taiwan

Huicheng Chang

USPTO Granted Patents = 207 

Average Co-Inventor Count = 5.5

ph-index = 8

Forward Citations = 609(Granted Patents)

Forward Citations (Not Self Cited) = 550(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tainan, TW (2013 - 2024)
  • Hsin-Chu, TW (2017 - 2024)

Company Filing History:

goldMedal207 out of 40,848 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Semiconductor Manufacturing
Ion Implantation
Wafer Bonding
Trench Isolation
Nanostructure Fet
Chemical Vapor Deposition
Transistor Formation
Annealing Processes
Temperature Control
Doped Dielectric Layer
Contact Formation
Epitaxial Defects
207 patents (USPTO):Explore Patents
1. 12501647 - Semiconductor device and method of manufacture (2025-12-16),
2. 12489002 - Annealing apparatus and method of operating the same (2025-12-02),
3. 12484240 - Semiconductor device and methods of forming the same (2025-11-25),
4. 12477764 - Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes (2025-11-18),
5. 12469742 - Shallow trench isolation forming method and structures resulting therefrom (2025-11-11),
6. 12451390 - Trench filling through reflowing filling material (2025-10-21),
7. 12438031 - Bonding system and method for using the same (2025-10-07),
8. 12432963 - Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer (2025-09-30),
9. 12426300 - Transistor source/drain contacts and methods of forming the same (2025-09-23),
10. 12419100 - Transistor isolation regions and methods of forming the same (2025-09-16),
11. 12419099 - Method for manufacturing semiconductor device (2025-09-16),
12. 12414338 - Nanostructure FET and method of forming same (2025-09-09),
13. 12406938 - Methods of forming alignment structure with trenches for semiconductor devices (2025-09-02),
14. 12400910 - Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer (2025-08-26),
15. 12399067 - Apparatus, system, and method for measuring the temperature of a substrate (2025-08-26),

Title: Huicheng Chang - Innovative Inventor from Tainan

Introduction: Huicheng Chang is a pioneering inventor based in Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Huicheng Chang holds several patents in various technological domains, showcasing his versatility and ingenuity in creating novel solutions to complex problems.

Career Highlights: With a career spanning over two decades, Huicheng Chang has consistently pushed the boundaries of innovation, with his work being recognized globally for its impact and significance.

Collaborations: Throughout his career, Huicheng Chang has collaborated with leading tech companies, research institutions, and universities, fostering a culture of innovation and knowledge sharing.

Conclusion: In conclusion, Huicheng Chang stands as a beacon of inspiration in the world of invention, with his relentless pursuit of innovation and excellence shaping the future of technology.

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