The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Aug. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Ting Chang, Hsinchu, TW;
Kuo-Ju Chen, Taichung, TW;
Tien-Shun Chang, New Taipei, TW;
Su-Hao Liu, Chiayi County, TW;
Huicheng Chang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a fin structure over a substrate; depositing a dummy gate layer over the substrate and the fin structure; depositing a hard mask stack over the dummy gate layer; depositing a photoresist bottom layer over the hard mask stack, wherein the photoresist bottom layer has a first stress; performing an implantation process to the photoresist bottom layer to form an implanted bottom layer with a second stress closer to 0 than the first stress; patterning the implanted bottom layer; patterning the hard mask stack and the dummy gate layer by using the patterned implanted bottom layer as an etch mask to form a dummy gate structure over the fin structure; and replacing the dummy gate structure with a metal gate structure.