The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
May. 13, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Han Chou, Hsinchu, TW;
Yi-Syuan Siao, Changhua, TW;
Su-Hao Liu, Jhongpu Township, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In an embodiment, a device includes: a source/drain region adjacent a channel region; an inter-layer dielectric on the source/drain region; a source/drain contact extending through the inter-layer dielectric and into the source/drain region; a metal-semiconductor alloy region between the source/drain contact and the source/drain region, the metal-semiconductor alloy region disposed beneath a top surface of the channel region, the metal-semiconductor alloy region including a first dopant; and a contact spacer around the source/drain contact, the contact spacer including the first dopant and an amorphizing impurity.