The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Fan Chen, New Taipei, TW;

Sen-Hong Syue, Hsinchu County, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/324 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67109 (2013.01); H01L 21/324 (2013.01); H01L 21/67248 (2013.01); H01L 21/67703 (2013.01);
Abstract

A method includes: transporting a wafer to an apparatus, the apparatus including: a first chamber configured to receive the wafer and a first gas; a second chamber surrounding the first chamber and configured to receive a second gas; a plurality of gas inlets on a chamber wall of the second chamber; and a plurality of gas vents on the chamber wall of the second chamber; heating the first chamber while keeping a gas pressure difference between the first chamber and the second chamber within a tolerance limit; and cooling the first chamber by exchanging the second gas in the second chamber while keeping the gas pressure difference within the tolerance limit.


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