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For the Inventor, By the Inventor

Hsinchu, Taiwan

Mrunal Abhijith Khaderbad

USPTO Granted Patents = 57 

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 29(Granted Patents)

Forward Citations (Not Self Cited) = 24(Dec 10, 2025)


Company Filing History:

goldMedal57 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Conductive Carbon Layers
Semiconductor Devices
Low Resistance Contacts
Barrier-Less Plug
Graphene Interconnects
Epitaxial Structures
Transistor Isolation
Dual Channel Structure
2D Channel Transistors
Cobalt-Based Interconnects
Chemical Vapor Deposition
Contact Interface Engineering
57 patents (USPTO):Explore Patents
1. 12444680 - Interconnect structures with conductive carbon layers (2025-10-14),
2. 12431412 - Contact plugs for semiconductor device and method of forming same (2025-09-30),
3. 12426291 - Contact and via structures for semiconductor devices (2025-09-23),
4. 12389674 - Low resistance fill metal layer material as stressor in metal gates (2025-08-12),
5. 12362281 - Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof (2025-07-15),
6. 12347725 - Semiconductor structure with material modification and low resistance plug (2025-07-01),
7. 12341013 - Method and structure for barrier-less plug (2025-06-24),
8. 12328938 - Gate structures for stacked semiconductor devices (2025-06-10),
9. 12315863 - Contact structures in semiconductor devices (2025-05-27),
10. 12266709 - Selective dual silicide formation using a maskless fabrication process flow (2025-04-01),
11. 12266688 - Semiconductor device with source/drain contact formed using bottom-up deposition (2025-04-01),
12. 12255249 - Inner spacer structures for gate-all-around field effect transistors (2025-03-18),
13. 12255239 - Liner layer for backside contacts of semiconductor devices (2025-03-18),
14. 12243915 - Graphene wrap-around contact (2025-03-04),
15. 12166079 - 2D channel transistors with low contact resistance (2024-12-10),

As an AI assistant specialized in innovations, inventions, inventors, patent attorneys, assignees and patents, I can provide you with an article about inventor Mrunal Abhijith Khaderbad and his remarkable contributions to the world of inventions.

Title: Mrunal Abhijith Khaderbad: Pushing the Boundaries of Innovation

Introduction:

Mrunal Abhijith Khaderbad, a dedicated inventor based in Hsinchu, Taiwan, is a true pioneer in the field of technological advancements. With a total of 34 patents to his name, Mr. Khaderbad has consistently demonstrated his commitment to pushing the boundaries of what is possible in the world of inventions.

Latest Patents:

Among his latest innovations, Mr. Khaderbad has introduced two groundbreaking patents: "Self-aligned barrier for metal vias" and "Low thermal budget dielectric for semiconductor devices." These patents showcase his expertise in semiconductor technology and his ability to develop solutions that address critical industry challenges.

Career Highlights:

Mr. Khaderbad is a valuable asset to the Taiwan Semiconductor Manufacturing Company Ltd. (TSMC). His contributions have played a significant role in advancing the company's position as a leader in the semiconductor industry. With a keen focus on research and development, Mr. Khaderbad continues to drive innovation within the organization.

Collaborations:

Throughout his career, Mr. Khaderbad has collaborated closely with esteemed colleagues such as Keng-Chu Lin and Sung-Li Wang. These collaborations have led to the successful development of cutting-edge technologies and have strengthened the company's portfolio of patents.

Conclusion:

In conclusion, Mrunal Abhijith Khaderbad's relentless pursuit of innovation and his dedication to excellence make him a true trailblazer in the world of inventions. His visionary approach to problem-solving and his ability to push the boundaries of what is possible have cemented his reputation as a pioneering inventor in the field of semiconductor technology.

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