The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 09, 2021
Taiwan Semiconductor Manufacturing Company., Ltd., Hsinchu, TW;
Mrunal Abhijith Khaderbad, Hsinchu City, TW;
Keng-Chu Lin, Ping-Tung, TW;
Ko-Feng Chen, Hsinchu City, TW;
Yu-Yun Peng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second contact structures proximate to each other and over the substrate, and first and second dielectric layers formed over the first and second contact structures, respectively. A top portion of the first dielectric layer can include a first dielectric material. A bottom portion of the first dielectric layer can include a second dielectric material different from the first dielectric material. The second dielectric layer can include a third dielectric material different from the first dielectric material.