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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12563830 B1

PDFFull Text
Date of Patent:
Feb. 24, 2026

Filed:

Jun. 25, 2024

Semiconductor devices including two-dimensional material and methods of fabrication thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Mrunal Abhijith Khaderbad, Hsinchu, TW;

Sathaiya Dhanyakumar Mahaveer, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

NZ Carr Law Office

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/76 (2006.01); H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10D 48/36 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 48/362 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01);
Abstract

According to embodiments of the present disclosure, two-dimensional (2D) materials may be used as nanosheet channels for multi-channel transistors. Nanosheet channels made two-dimensional (2D) materials can achieve the same drive current at smaller dimensions and/or fewer number of channels, therefore enable scaling down and/or boost derive current. Embodiments of the present disclosure also provide a solution of P-type and N-type balancing in a device without increasing footprint of the device.

Find Patent Forward Citations

Khaderbad, Mrunal. (2026). Semiconductor devices including two-dimensional material and methods of fabrication thereof (U.S. Patent No. 12563830). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563830

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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