The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Nov. 20, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Inventors:
Mrunal A. Khaderbad, Hsinchu, TW;
Akira Mineji, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3115 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/76825 (2013.01); H01L 21/7684 (2013.01); H01L 21/76879 (2013.01); H01L 23/522 (2013.01); H01L 23/53266 (2013.01); H10D 64/01 (2025.01); H01L 21/31155 (2013.01); H10D 30/6219 (2025.01);
Abstract
A semiconductor device that includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a conductive feature over the semiconductor substrate and buried in the dielectric layer, and a metal plug over the conductive feature and buried in the dielectric layer, where the dielectric layer has a hydrophobic sidewall facing the metal plug.