Weng Chang

This inventor holds 106 USPTO granted patents and 38 published patent applications, primarily in Semiconductor Devices (CPC class H01L21-28088). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2000-2026.

USPTO Granted Patents = 106 (Patent Applications = 38)

% Patents Active = 92.5

Average Co-Inventor Count = 3.9

ph-index = 12

Forward Citations = 477(Granted Patents)

Forward Citations (Not Self Cited) = 435(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Taipei, TW (2000 - 2008)
Hsin-Chu, TW (2005 - 2024)

Company Filing History:

103 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2000-2026

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Areas of Expertise:

Work Function Control

Gate Structures

Semiconductor Device

Nanosheet Transistor

Transistor Formation

Metal Gate Modulators

Doped Gate Dielectric

FinFET Devices

Area-Selective Removal

Seam-Filling Techniques

Pre-Deposition Treatment

Profiled Metal Gate Electrode

106 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696513 - Work-function metal in transistors and method forming same (2026-07-28),

2. 12660292 - Semiconductor device and method of forming the same (2026-06-16),

3. 12610578 - Work function control in gate structures (2026-04-21),

4. 12575154 - Methods for pre-deposition treatment of a work-function metal layer (2026-03-10),

5. 12550374 - Semiconductor device and formation method thereof (2026-02-10),

6. 12520554 - Area-selective removal and selective metal cap (2026-01-06),

7. 12507470 - Semiconductor device and method of fabricating the same (2025-12-23),

8. 12484274 - Techniques for semiconductor gate and contact formation to reduce seam formation (2025-11-25),

9. 12471342 - NFET with aluminum-free work-function layer and method forming same (2025-11-11),

10. 12464817 - Semiconductor device and method (2025-11-04),

11. 12453153 - Work-function layers in the gates of pFETs (2025-10-21),

12. 12439666 - Semiconductor device and methods of manufacture (2025-10-07),

13. 12439648 - Transistor gate structures and methods of forming thereof (2025-10-07),

14. 12426321 - Transistor gate structures and methods of forming the same (2025-09-23),

15. 12417918 - Semiconductor device having doped gate dielectric layer and method for forming the same (2025-09-16),

Title: The Innovative Journey of Inventor Weng Chang

Introduction: Weng Chang, a talented inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Weng Chang holds several patents in the areas of semiconductor technology and renewable energy, showcasing his versatility and ingenuity in creating solutions for modern challenges.

Career Highlights: Throughout his illustrious career, Weng Chang has worked for leading tech companies, where he spearheaded research and development projects that have led to the creation of cutting-edge products.

Collaborations: Weng Chang has collaborated with top researchers and engineers in the industry, fostering a culture of innovation and knowledge-sharing that has propelled the field forward.

Conclusion: In conclusion, Weng Chang's dedication to innovation and his passion for creating impactful inventions have solidified his reputation as a pioneering inventor in the tech world.