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Hsin-Chu, Taiwan

Weng Chang

USPTO Granted Patents = 100 (Patent Applications = 32)

Average Co-Inventor Count = 3.8

ph-index = 12

Forward Citations = 459(Granted Patents)

Forward Citations (Not Self Cited) = 435(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Taipei, TW (2000 - 2008)
Hsin-Chu, TW (2005 - 2024)

Company Filing History:

100 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2000-2025

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Areas of Expertise:

Semiconductor Devices

Nanosheet Field-Effect Transistors

Gate Structures

Work-Function Control

FinFET Devices

Doped Gate Dielectric Layers

Metal Gate Modulators

Seam Formation Techniques

Threshold Voltage Tuning

Selective Deposition

Transistor Gate Structures

100 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12507470 - Semiconductor device and method of fabricating the same (2025-12-23),

2. 12484274 - Techniques for semiconductor gate and contact formation to reduce seam formation (2025-11-25),

3. 12471342 - NFET with aluminum-free work-function layer and method forming same (2025-11-11),

4. 12464817 - Semiconductor device and method (2025-11-04),

5. 12453153 - Work-function layers in the gates of pFETs (2025-10-21),

6. 12439666 - Semiconductor device and methods of manufacture (2025-10-07),

7. 12439648 - Transistor gate structures and methods of forming thereof (2025-10-07),

8. 12426321 - Transistor gate structures and methods of forming the same (2025-09-23),

9. 12417918 - Semiconductor device having doped gate dielectric layer and method for forming the same (2025-09-16),

10. 12414340 - Semiconductor structure including nanosheet channel structure and method for forming the same (2025-09-09),

11. 12376340 - Nanosheet field-effect transistor device and method of forming (2025-07-29),

12. 12363974 - Gate structure of semiconductor device and method of forming same (2025-07-15),

13. 12183638 - In-situ formation of metal gate modulators (2024-12-31),

14. 12176401 - Seam-filling of metal gates with Si-containing layers (2024-12-24),

15. 12176251 - Semiconductor device with profiled work-function metal gate electrode and method of making (2024-12-24),

Title: The Innovative Journey of Inventor Weng Chang

Introduction: Weng Chang, a talented inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Weng Chang holds several patents in the areas of semiconductor technology and renewable energy, showcasing his versatility and ingenuity in creating solutions for modern challenges.

Career Highlights: Throughout his illustrious career, Weng Chang has worked for leading tech companies, where he spearheaded research and development projects that have led to the creation of cutting-edge products.

Collaborations: Weng Chang has collaborated with top researchers and engineers in the industry, fostering a culture of innovation and knowledge-sharing that has propelled the field forward.

Conclusion: In conclusion, Weng Chang's dedication to innovation and his passion for creating impactful inventions have solidified his reputation as a pioneering inventor in the tech world.

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