Semiconductor device and methods of manufacture

Abstract

Semiconductor devices and methods of manufacturing the semiconductor devices are disclosed herein. The methods include forming nanostructures in a multilayer stack of semiconductor materials. An interlayer dielectric is formed surrounding the nanostructures and a gate dielectric is formed surrounding the interlayer dielectric. A first work function layer is formed over the gate dielectric. Once the first work function layer has been formed, an annealing process is performed on the resulting structure and oxygen is diffused from the gate dielectric into the interlayer dielectric. After performing the annealing process, a second work function layer is formed adjacent the first work function layer. A gate electrode stack of a nano-FET device is formed over the nanostructures by depositing a conductive fill material over the second work function layer.